Mehdi Saremi

 

mehdi.saremi@gmail.com

Tel: +98 9166611820

 

Personal

  • Born in August 1985, Khorram Abad, Iran.
  • Single.

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Education

  • Fall 2007 – Present University of Tehran Tehran, Iran
    M.Sc., Semiconductor Devices, Electronics, Electrical and Computer Engineering.
    • Thesis: Modeling of Speed and Power Consumption Variations in Nanotechnology (score: 19.3/20 (4/4))
      Advisor:
      Prof. Ali Afzali-Kusha
      GPA: 18.51/20 (3.91/4) (The second rank)
  • Fall 2003 – Sept. 2007 IRAN University of Science and Technology (IUST), Tehran, Iran. B.Sc., Electronics, Electrical Engineering.
    • Thesis: Design and Manufacture of Amplifier of EMG Signals (score: 20/20 (4/4))
      Advisor: Prof. Ahmad. Ayatollahi
      GPA: 15.17/20 (3.03/4)
      Major GPA:
      16.39/20 (3.34/4)
  • Fall 2000 – May 2001 NODET* Pre-University institute Khorram Abad, Iran. Pre-University Certificate in Mathematics and Physics.
    • GPA: 19.95/20 (The first rank)
  • Fall 1997 – May 2000 NODET High School Khorram Abad, Iran
    High School Diploma in Mathematics and physics.
    • GPA: 19.65/20 (The first rank)

* NODET: National Organization for Development of Exceptional Talents.

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Honors

      • Ranked 2nd among M.Sc students of the Semiconductor-Device/Electronics engineering of the University of Tehran, class of 2008.
      • Ranked 147th in nation-wide M.Sc. entrance exam in 2007.
      • Ranked 304th among more than 450000 students in the undergraduate entrance exam in 2003.
      • Ranked 1st in the Nation-wide final pre-university exams in the city of Khorram Abad in 2003.
      • Ranked 1st in the Nation-wide final high school exams in the city of Khorram Abad in 2002. 

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Publications

  • Journal Submissions
    • Mehdi Saremi, Ali Afzali-Kusha, and Saeed Mohammadi, "Ground Plane FinFET: A FinFET for Low Leakage Power Circuits and Study of its’ Process Variation ", is submitted to The Japanese Journal of Applied Physics.
    • Mehdi Saremi, Ali Afzali-Kusha, and Saeed Mohammadi, "A New Partial-SOI LDMOSFET with Triangle Buried-Oxide for Breakdown Voltage Improvement ", in prepration.
  • Conference Papers
    • Mehdi Saremi, Behzad Ebrahimi, Ali Afzali-Kusha, Mohammad Saremi “ Process Variation Study of Ground Plane SOI MOSFET”, in Proc. 2nd Asia Symposium on Quality Electronic Design (ASQED) 2010 in Penang, Malaysia .
    • Mehdi Saremi, Behzad Ebrahimi, Ali Afzali-Kusha, “Ground Plane SOI MOSFET Based SRAM with Consideration of Process Variation”, is Proc. 2010 International Conference on Electron Devices & Solid-State Circuits (EDSSC) in Hong Kong, China.

 

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Skills and Experiences

  • Programming Languages:
    • MATLAB, Simulink, Pascal, Basic, 8085/8086/8051,

     

  • CAD Tools and HDL:
    • Sentaurus-device, inspect, tecplot, Sentaurus-structure editor, HSPICE, PSPICE, ORCAD.
       
  • Operating Systems and Microsoft Office:
    • Windows, MS-DOS, Word, Power Point, Excel, Front-Page

 

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Work Experiences

  • High Power and High Frequency Project: Modeling and surveying high power and high frequency (HPHF) transistors.
    Advisor: Prof. Ali Afzali-Kusha

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